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TGF2023-05 - 25 Watt Discrete Power GaN on SiC HEMT

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TriQuint Semiconductor

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TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT by TriQuint Semiconductor - Datasheet Preview — Datasheet preview – TGF2023-05

Datasheet Details

Part number	TGF2023-05
Manufacturer	TriQuint Semiconductor
File Size	400.57 KB
Description	25 Watt Discrete Power GaN on SiC HEMT
Datasheet	TGF2023-05 Datasheet
Additional preview pages of the TGF2023-05 datasheet.

TGF2023-05 Product details

Description

The TriQuint TGF2023-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC-18 GHz.

The TGF2023-05 is designed using TriQuint’s proven 0.25um GaN production process.

Features

Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 1.44 x 0.10 mm Primary.

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Other Datasheets by TriQuint Semiconductor

TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-02 - 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-10 - 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-01 - SiC HEMT
TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05 - 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10 - 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-20 - 100 Watt Discrete Power GaN on SiC HEMT

Published: Jul 1, 2012 |