TGF2023-01
TGF2023-01 is 6 Watt Discrete Power GaN on SiC HEMT manufactured by TriQuint Semiconductor.
6 Watt Discrete Power GaN on SiC HEMT
Key Features
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- Frequency Range: DC
- 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28
- 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Measured Performance
Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.6 V Typical
Primary Applications
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.DataSheet.net/
Defense & Aerospace Broadband Wireless
Product Description
The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-01 is designed using TriQuint’s proven 0.25um GaN production process. This process...
