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TGF2023-01 Datasheet

Manufacturer: TriQuint Semiconductor
TGF2023-01 datasheet preview

Datasheet Details

Part number TGF2023-01
Datasheet TGF2023-01_TriQuintSemiconductor.pdf
File Size 0.96 MB
Manufacturer TriQuint Semiconductor
Description 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-01 page 2 TGF2023-01 page 3

TGF2023-01 Overview

The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-01 is designed using TriQuint’s proven 0.25um GaN production process.

TGF2023-01 Key Features

  • 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28
  • 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm
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TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-01 SiC HEMT
TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT
TGF2021-01 DC-12 GHz Discrete Power pHEMT
TGF2021-02 DC - 12 GHz Discrete power pHEMT

TGF2023-01 Distributor

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