| Part number | TGF2023-10 |
|---|---|
| Datasheet | TGF2023-10_TriQuintSemiconductor.pdf |
| File Size | 407.52 KB |
| Manufacturer | TriQuint Semiconductor |
| Description | 50 Watt Discrete Power GaN on SiC HEMT |
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Vd = 28 V, Idq = 1 A, Vg = -3.6 V Typical The TriQuint TGF2023-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-10 is designed using TriQuint’s proven 0.25um GaN production process.
See all TriQuint Semiconductor datasheets
| Part Number | Description |
|---|---|
| TGF2023-01 | 6 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-02 | 12 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-05 | 25 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-2-01 | SiC HEMT |
| TGF2023-2-02 | 12 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-2-05 | 25 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-2-10 | 50 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-20 | 100 Watt Discrete Power GaN on SiC HEMT |
| TGF2021-01 | DC-12 GHz Discrete Power pHEMT |
| TGF2021-02 | DC - 12 GHz Discrete power pHEMT |
