TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT

TriQuint Semiconductor

General Description

The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz.

The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process.

Key Features

Frequency Range: DC - 18 GHz.
40.1 dBm Nominal PSAT at 3 GHz.
73.3% Maximum PAE.
21 dB Nominal Power Gain at 3 GHz.
Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA.
Technology: TQGaN25 on SiC.
Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional Block Diagram General.

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TGF2023-2-02 12 watt discrete power gan on sic hemt by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	TGF2023-2-02
Manufacturer	TriQuint Semiconductor
File Size	1.84 MB
Description	12 Watt Discrete Power GaN on SiC HEMT
Datasheet	TGF2023-2-02 Datasheet

More Datasheets from TriQuint Semiconductor

Part Number	Description
TGF2023-2-01	SiC HEMT
TGF2023-2-05	25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10	50 Watt Discrete Power GaN on SiC HEMT
TGF2023-20	100 Watt Discrete Power GaN on SiC HEMT
TGF2023-01	6 Watt Discrete Power GaN on SiC HEMT
TGF2023-02	12 Watt Discrete Power GaN on SiC HEMT
TGF2023-05	25 Watt Discrete Power GaN on SiC HEMT
TGF2023-10	50 Watt Discrete Power GaN on SiC HEMT
TGF2021-01	DC-12 GHz Discrete Power pHEMT
TGF2021-02	DC - 12 GHz Discrete power pHEMT

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Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 40.1 dBm Nominal PSAT at 3 GHz • 73.3% Maximum PAE • 21 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional Block Diagram General Description The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. Pad Configuration Pad No.