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TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT

General Description

The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz.

The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process.

Key Features

  • Frequency Range: DC - 18 GHz.
  • 40.1 dBm Nominal PSAT at 3 GHz.
  • 73.3% Maximum PAE.
  • 21 dB Nominal Power Gain at 3 GHz.
  • Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA.
  • Technology: TQGaN25 on SiC.
  • Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional Block Diagram General.

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Datasheet Details

Part number TGF2023-2-02
Manufacturer TriQuint Semiconductor
File Size 1.84 MB
Description 12 Watt Discrete Power GaN on SiC HEMT
Datasheet download datasheet TGF2023-2-02 Datasheet

Full PDF Text Transcription for TGF2023-2-02 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TGF2023-2-02. For precise diagrams, and layout, please refer to the original PDF.

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 40.1 dBm Nom...

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iC HEMT Product Features • Frequency Range: DC - 18 GHz • 40.1 dBm Nominal PSAT at 3 GHz • 73.3% Maximum PAE • 21 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional Block Diagram General Description The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. Pad Configurati

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