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TGF2023-2-02 Datasheet

Manufacturer: TriQuint Semiconductor
TGF2023-2-02 datasheet preview

TGF2023-2-02 Details

Part number TGF2023-2-02
Datasheet TGF2023-2-02-TriQuintSemiconductor.pdf
File Size 1.84 MB
Manufacturer TriQuint Semiconductor
Description 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-02 page 2 TGF2023-2-02 page 3

TGF2023-2-02 Overview

The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process.

TGF2023-2-02 Key Features

  • Frequency Range: DC
  • 18 GHz
  • 40.1 dBm Nominal PSAT at 3 GHz
  • 73.3% Maximum PAE
  • 21 dB Nominal Power Gain at 3 GHz
  • Bias: VD = 12
  • 32 V, IDQ = 50
  • 250 mA
  • Technology: TQGaN25 on SiC
  • Chip Dimensions: 0.82 x 0.92 x 0.10 mm

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