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TGF2023-2-05 Datasheet

Manufacturer: TriQuint Semiconductor
TGF2023-2-05 datasheet preview

TGF2023-2-05 Details

Part number TGF2023-2-05
Datasheet TGF2023-2-05-TriQuintSemiconductor.pdf
File Size 2.85 MB
Manufacturer TriQuint Semiconductor
Description 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05 page 2 TGF2023-2-05 page 3

TGF2023-2-05 Overview

The TriQuint TGF2023-2-05 is a discrete 5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-05 is designed using TriQuint’s proven TQGaN25 production process.

TGF2023-2-05 Key Features

  • Frequency Range: DC
  • 18 GHz
  • 43 dBm Nominal PSAT at 3 GHz
  • 78.3% Maximum PAE
  • 18 dB Nominal Power Gain at 3 GHz
  • Bias: VD = 12
  • 32 V, IDQ = 100
  • 500 mA
  • Technology: TQGaN25 on SiC
  • Chip Dimensions: 0.82 x 1.44 x 0.10 mm

TGF2023-2-05 Distributor

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