TGF2023-20 - 100 Watt Discrete Power GaN on SiC HEMT

Product Overview

TriQuint Semiconductor

Datasheet Details

Part number	TGF2023-20
Manufacturer	TriQuint Semiconductor
File Size	406.32 KB
Description	100 Watt Discrete Power GaN on SiC HEMT
Datasheet	TGF2023-20 Datasheet
Additional preview pages of the TGF2023-20 datasheet.

Product details

Description

Bias conditions: Vd = 28 V, Idq = 2 A, Vg = -3.6 V Typical The TriQuint TGF2023-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-18 GHz.The TGF2023-20 is designed using TriQuint’s proven 0.25um GaN production process.This process

Features

Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 2 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 mm Primary.

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Other Datasheets by TriQuint Semiconductor

TGF2023-2-01 - SiC HEMT
TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05 - 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10 - 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-02 - 12 Watt Discrete Power GaN on SiC HEMT

Published: Jul 1, 2012 |