TGF2023-20
TGF2023-20 is 100 Watt Discrete Power GaN on SiC HEMT manufactured by TriQuint Semiconductor.
90 Watt Discrete Power GaN on SiC HEMT
Key Features
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- Frequency Range: DC
- 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28
- 32 V, Idq = 2 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 mm
Primary Applications
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.DataSheet.net/
Defense & Aerospace Broadband Wireless
Product Description
Bias conditions: Vd = 28 V, Idq = 2 A, Vg = -3.6 V Typical
The TriQuint TGF2023-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-20 is designed using TriQuint’s proven 0.25um GaN production process. This process Features advanced field plate...
