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TGF2023-2-10 Datasheet

Manufacturer: TriQuint Semiconductor
TGF2023-2-10 datasheet preview

Datasheet Details

Part number TGF2023-2-10
Datasheet TGF2023-2-10-TriQuintSemiconductor.pdf
File Size 1.57 MB
Manufacturer TriQuint Semiconductor
Description 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10 page 2 TGF2023-2-10 page 3

TGF2023-2-10 Overview

The TriQuint TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-10 is designed using TriQuint’s proven TQGaN25 production process.

TGF2023-2-10 Key Features

  • Frequency Range: DC
  • 18 GHz
  • 47.3 dBm Nominal PSAT at 3 GHz
  • 69.5% Maximum PAE
  • 19.8 dB Nominal Power Gain at 3 GHz
  • Bias: VD = 12
  • 32 V, IDQ = 200
  • 1000 mA
  • Technology: TQGaN25 on SiC
  • Chip Dimensions: 0.82 x 2.48 x 0.10 mm
TriQuint Semiconductor logo - Manufacturer

More Datasheets from TriQuint Semiconductor

See all TriQuint Semiconductor datasheets

Part Number Description
TGF2023-2-01 SiC HEMT
TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT
TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT
TGF2021-01 DC-12 GHz Discrete Power pHEMT
TGF2021-02 DC - 12 GHz Discrete power pHEMT

TGF2023-2-10 Distributor

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