TGF2023-2-10 Key Features
- Frequency Range: DC
- 18 GHz
- 47.3 dBm Nominal PSAT at 3 GHz
- 69.5% Maximum PAE
- 19.8 dB Nominal Power Gain at 3 GHz
- Bias: VD = 12
- 32 V, IDQ = 200
- 1000 mA
- Technology: TQGaN25 on SiC
- Chip Dimensions: 0.82 x 2.48 x 0.10 mm
- Part: TGF2023-2-10
- Manufacturer: TriQuint Semiconductor
- Size: 1.57 MB
Related TriQuint Semiconductor Datasheets
| Part Number | Description |
|---|---|
| TGF2023-2-01 | SiC HEMT |
| TGF2023-2-02 | 12 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-2-05 | 25 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-20 | 100 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-01 | 6 Watt Discrete Power GaN on SiC HEMT |
TGF2023-2-10 Description
The TriQuint TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-10 is designed using TriQuint’s proven TQGaN25 production process.