TGF2023-02 - 12 Watt Discrete Power GaN on SiC HEMT

Product Overview

TriQuint Semiconductor

Part number	TGF2023-02
Manufacturer	TriQuint Semiconductor
File Size	395.00 KB
Description	12 Watt Discrete Power GaN on SiC HEMT
Datasheet	TGF2023-02 Datasheet
Additional preview pages of the TGF2023-02 datasheet.

The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz.

Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mm Primary.

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Published: Jul 1, 2012 |