TGF2023-02
TGF2023-02 is 12 Watt Discrete Power GaN on SiC HEMT manufactured by TriQuint Semiconductor.
12 Watt Discrete Power GaN on SiC HEMT
Key Features
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- Frequency Range: DC
- 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28
- 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mm
Primary Applications
Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.6 V Typical
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.DataSheet.net/
Defense & Aerospace Broadband Wireless
Product Description
The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-02 is designed using TriQuint’s proven 0.25um GaN production process. This process Features advanced field plate...
