TGF2023-02 Description
The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-02 is designed using TriQuint’s proven 0.25um GaN production process.
TGF2023-02 Key Features
- 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28
- 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mm