TGF2023-05 Datasheet 25 Watt Discrete Power GaN on SiC HEMT

Manufacturer: TriQuint Semiconductor

TGF2023-05 25 watt discrete power gan on sic hemt by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	TGF2023-05
Manufacturer	TriQuint Semiconductor
File Size	400.57 KB
Description	25 Watt Discrete Power GaN on SiC HEMT
Datasheet	TGF2023-05 Datasheet

General Description

Bias conditions: Vd = 28 V, Idq = 500 mA, Vg = -3.6 V Typical The TriQuint TGF2023-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC-18 GHz.

The TGF2023-05 is designed using TriQuint’s proven 0.25um GaN production process.

This process

Overview

TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key.

Key Features

Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 1.44 x 0.10 mm Primary.

More Datasheets from TriQuint Semiconductor

Part Number	Description
TGF2023-01	6 Watt Discrete Power GaN on SiC HEMT
TGF2023-02	12 Watt Discrete Power GaN on SiC HEMT
TGF2023-10	50 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-01	SiC HEMT
TGF2023-2-02	12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05	25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10	50 Watt Discrete Power GaN on SiC HEMT
TGF2023-20	100 Watt Discrete Power GaN on SiC HEMT
TGF2021-01	DC-12 GHz Discrete Power pHEMT
TGF2021-02	DC - 12 GHz Discrete power pHEMT