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TGF2023-05 - 25 Watt Discrete Power GaN on SiC HEMT

The TGF2023-05 by TriQuint Semiconductor is a 25 Watt Discrete Power GaN on SiC HEMT. Below is the official datasheet preview.

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Official preview page of the TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT datasheet (TriQuint Semiconductor).

Datasheet Details

Part number TGF2023-05
Manufacturer TriQuint Semiconductor
File Size 400.57 KB
Description 25 Watt Discrete Power GaN on SiC HEMT
Datasheet download datasheet TGF2023-05_TriQuintSemiconductor.pdf
Additional preview pages of the TGF2023-05 datasheet.

TGF2023-05 Product details

Description

Bias conditions: Vd = 28 V, Idq = 500 mA, Vg = -3.6 V Typical The TriQuint TGF2023-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC-18 GHz.The TGF2023-05 is designed using TriQuint’s proven 0.25um GaN production process.This process

Features

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