TGF2023-10 Description
Vd = 28 V, Idq = 1 A, Vg = -3.6 V Typical The TriQuint TGF2023-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-10 is designed using TriQuint’s proven 0.25um GaN production process.
TGF2023-10 Key Features
- 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28
- 32 V, Idq = 1 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 2.48 x 0.10 mm