TGF2023-2-02 Key Features
- Frequency Range: DC
- 18 GHz
- 40.1 dBm Nominal PSAT at 3 GHz
- 73.3% Maximum PAE
- 21 dB Nominal Power Gain at 3 GHz
- Bias: VD = 12
- 32 V, IDQ = 50
- 250 mA
- Technology: TQGaN25 on SiC
- Chip Dimensions: 0.82 x 0.92 x 0.10 mm
- Part: TGF2023-2-02
- Manufacturer: TriQuint Semiconductor
- Size: 1.84 MB
Related TriQuint Semiconductor Datasheets
| Part Number | Description |
|---|---|
| TGF2023-2-01 | SiC HEMT |
| TGF2023-2-05 | 25 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-2-10 | 50 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-20 | 100 Watt Discrete Power GaN on SiC HEMT |
| TGF2023-01 | 6 Watt Discrete Power GaN on SiC HEMT |
TGF2023-2-02 Description
The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process.