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TGF2023-2-05 Datasheet Preview

TGF2023-2-05 Datasheet

25 Watt Discrete Power GaN on SiC HEMT

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Applications
Defense & Aerospace
Broadband Wireless
TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT
Product Features
Frequency Range: DC - 18 GHz
43 dBm Nominal PSAT at 3 GHz
78.3% Maximum PAE
18 dB Nominal Power Gain at 3 GHz
Bias: VD = 12 - 32 V, IDQ = 100 - 500 mA
Technology: TQGaN25 on SiC
Chip Dimensions: 0.82 x 1.44 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-05 is a discrete 5 mm GaN on
SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-05 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
Pad Configuration
Pad No.
1-4
5
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2023-2-05 typically provides 43.0 dBm of
saturated output power with power gain of 18 dB at
3 GHz. The maximum power added efficiency is
78.3 % which makes the TGF2023-2-05 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Ordering Information
Part
ECCN Description
TGF2023-2-05 3A001b.3.b 25 Watt GaN HEMT
Datasheet: Rev C 9-27-13
© 2013 TriQuint
- 1 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com




TriQuint Semiconductor

TGF2023-2-05 Datasheet Preview

TGF2023-2-05 Datasheet

25 Watt Discrete Power GaN on SiC HEMT

No Preview Available !

TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Value
Drain to Gate Voltage (VDG)
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Power Dissipation (PD)
CW Input Power (PIN)
Channel Temperature (TCH)
Mounting Temperature
(S3t0orSaegceoTnedms)perature
100 V
40 V
−50 to 0 V
5A
−5 to 14 mA
See graph on pg.3.
+37 dBm
275°C
320 °C
−65 to 150°C
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
Parameter
Value
Drain Voltage Range (VD)
28 – 32 V
Drain Quiescent Current (IDQ)
250 mA
Drain Current Under RF Drive ( ID)
1.5 A (Typ.)
Gate Voltage (VG)
−3.0 V (Typ.)
Channel Temperature (TCH)
225°C (Max.)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
RF Characterization – Optimum Power Tune
Test conditions unless otherwise noted: T = 25°C, Bond wires included. Measured data provided by Modelithics.
Parameter
Typical Value
Frequency (F)
3
Drain Voltage (VD)
12 12 28
Bias Current (IDQ)
100 250 100
Input Power (Pin)
23 23 25
Output Power (Pout)
39.1 39.2
43
Power Added Efficiency (PAE)
78.2
60.7
62.7
Power Gain (Gain)
Parallel Resistance (1) (Rp)
Parallel Capacitance (1) (Cp)
Load Reflection Coefficient (2) (ΓL)
16.1
32.4
1.14
0.84173°
16.2
32.4
1.14
0.84173°
18
72.2
0.43
0.65165°
Notes:
1. Large signal equivalent output network (normalized).
2. Characteristic Impedance (Zo) = 50 Ω.
28
250
25
43
62.9
18
73.6
0.35
0.62166°
Units
GHz
V
mA
dBm
dBm
%
dB
Ω∙mm
pF/mm
--
RF Characterization – Optimum Efficiency Tune
Test conditions unless otherwise noted: T = 25°C, Bond wires included. Measured data provided by Modelithics.
Parameter
Typical Value
Frequency (F)
3
Drain Voltage (VD)
12 12 28
Bias Current (IDQ)
100 250 100
Input Power (Pin)
23 23 25
Output Power (Pout)
36.5 36.6 40.3
Power Added Efficiency (PAE)
78.3
77.8
75.9
Power Gain (Gain)
Parallel Resistance (1) (Rp)
Parallel Capacitance (1) (Cp)
Load Reflection Coefficient (2) (ΓL)
13.5
92.7
0.82
0.79160°
13.6
92.7
0.82
0.79160°
15.3
231
0.55
0.78143°
Notes:
1. Large signal equivalent output network (normalized).
2. Characteristic Impedance (Zo) = 50 Ω.
28
250
25
40.4
75.6
15.4
223
0.54
0.77143°
Units
GHz
V
mA
dBm
dBm
%
dB
Ω∙mm
pF/mm
--
Datasheet: Rev C 9-27-13
© 2013 TriQuint
- 2 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com


Part Number TGF2023-2-05
Description 25 Watt Discrete Power GaN on SiC HEMT
Maker TriQuint Semiconductor
PDF Download

TGF2023-2-05 Datasheet PDF






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