TGF2023-20 Datasheet 100 Watt Discrete Power GaN on SiC HEMT

Manufacturer: TriQuint Semiconductor

Datasheet Details

Part number	TGF2023-20
Manufacturer	TriQuint Semiconductor
File Size	406.32 KB
Description	100 Watt Discrete Power GaN on SiC HEMT
Datasheet	TGF2023-20 Datasheet

Bias conditions: Vd = 28 V, Idq = 2 A, Vg = -3.6 V Typical The TriQuint TGF2023-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-18 GHz.

The TGF2023-20 is designed using TriQuint’s proven 0.25um GaN production process.

This process

TGF2023-20 90 Watt Discrete Power GaN on SiC HEMT Key.

Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 2 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 mm Primary.

Part Number	Description
TGF2023-2-01	SiC HEMT
TGF2023-2-02	12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05	25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10	50 Watt Discrete Power GaN on SiC HEMT
TGF2023-01	6 Watt Discrete Power GaN on SiC HEMT
TGF2023-02	12 Watt Discrete Power GaN on SiC HEMT
TGF2023-05	25 Watt Discrete Power GaN on SiC HEMT
TGF2023-10	50 Watt Discrete Power GaN on SiC HEMT
TGF2021-01	DC-12 GHz Discrete Power pHEMT
TGF2021-02	DC - 12 GHz Discrete power pHEMT