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Tuofeng

Si2303 Datasheet Preview

Si2303 Datasheet

P-Channel MOSFET

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Si2303
P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.240 @ VGS = –10 V
–30
0.460 @ VGS = –4.5 V
ID (A)b
–1.4
–1.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2303DS (A3T)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
VDS –30
V
VGS "20
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
TA= 25_C
ID
IDM
IS
–1.4
–1.3
–0.75
–10
–0.6
A
Power Dissipationb
TA= 25_C
PD
0.9
0.7 W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
Symbol
RthJA
Typical
115
140
Maximum
140
175
Unit
_C/W
1




Tuofeng

Si2303 Datasheet Preview

Si2303 Datasheet

P-Channel MOSFET

No Preview Available !

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS v 5 V, VGS = 10 V
VGS = 10 V, ID = 1.7 A
VGS = 4.5 V, ID = 1.3 A
VDS = 5 V, ID = 1.7 A
IS = 0.75 A, VGS = 0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = 15 V, VGS = 10 V
ID ^ 1.7 A
VDS = 15 V, VGS = 0, f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 15 V, RL =15 W
ID ^ 1.0 A, VGEN = 4.5 V
RG = 6 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600
Limits
Min Typ Max
Unit
30
1.0
6
0.120
0.230
2.4
0.80
3.0
"100
1
10
0.240
0.460
1.2
V
nA
mA
A
W
S
V
4.5 10
0.9
0.9
260
65
35
nC
pF
6 20
10 20
15 35
7 20
ns
2


Part Number Si2303
Description P-Channel MOSFET
Maker Tuofeng
PDF Download

Si2303 Datasheet PDF





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