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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Si2303 P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.240 @ VGS = –10 V 0.460 @ VGS = –4.5 V
ID (A)b
–1.4 –1.0
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2303DS (A3T)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 25_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 sec
–30 "20 –1.4 –10 –0.75 0.9
Steady State
Unit
V
–1.3 A –0.6 0.7 –55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a.
Si2303 Datasheet
