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MA4AGSW1 - AlGaAs SPST Reflective PIN Diode Switch

Description

M/A-COM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide anode enhanced, SPST PIN diode switch.

AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode resistance than conventional GaAs processes.

Features

  • Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz Dual shunt diode configuration 0.35 dB Insertion Loss, 46 dB Isolation at 50 GHz Low Current consumption: -5 V for Low Loss State +10 mA for Isolation State n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection n n n n n MA4AGSW1 Layout.

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Full PDF Text Transcription

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AlGaAs SPST Reflective PIN Diode Switch V 1.00 MA4AGSW1 Features Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz Dual shunt diode configuration 0.35 dB Insertion Loss, 46 dB Isolation at 50 GHz Low Current consumption: -5 V for Low Loss State +10 mA for Isolation State n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection n n n n n MA4AGSW1 Layout Description M/A-COM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide anode enhanced, SPST PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode resistance than conventional GaAs processes.
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