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AlGaAs SP3T PIN Diode Switch
V 1.00
MA4AGSW3
Features
Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.8 dB Insertion Loss, 31 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection
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MA4AGSW3 Layout
Description
M/A-COM’s MA4AGSW3 is an Aluminum-Gallium-Arsenide anode enhanced, SP3T PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz.
MA4AGSW3 Datasheet
