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MA4E2544L-1282 - SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series

Description

The MA4E2544L-1282 Series SurMountTM Low Barrier, Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Features

  • Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n Case Style 1282 - Topview A B.

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Full PDF Text Transcription

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SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series V 1.00 MA4E2544L-1282 Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n Case Style 1282 - Topview A B Description The MA4E2544L-1282 Series SurMountTM Low Barrier, Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.
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