QM2604V Datasheet | UBIQ Semiconductor

Description The QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2604V meet the Ro HS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 50mΩ 155 mΩ ID 3.8A -2.3A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch TSOP6 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating N-Channel P-Channel 20 20 ±12 ±12 3.8 -2.3 3 -1.8 15.2 -9.2 1.1 1.1 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ. ----- Max. 110 70 Unit ℃/W ℃/W Rev A.02 D041411 N-Ch and P-Ch 20V Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise...