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10N70Z - 10A 700V N-CHANNEL POWER MOSFET

Description

The UT C 10N70Z is a high voltage and high curr ent po wer MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and have a high ru gged avala nche ch aracteristics.

Features

  • ES.
  • RDS(ON) =1.2Ω@VGS =10V.
  • Low gate charge ( typical 44 nC).
  • Low Crss ( typical 18 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL.
  • OR DERING.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 10N70Z 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The UT C 10N70Z is a high voltage and high curr ent po wer MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and have a high ru gged avala nche ch aracteristics. T his po wer M OSFET is usually used at high speed switching applications in power supplies, PWM motor co ntrols, high effi cient DC to DC converters a nd bridge circuits.  FEATURES * RDS(ON) =1.
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