2N60-C Datasheet PDF (N-CHANNEL MOSFET)

2N60-C - N-CHANNEL MOSFET

Description

The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) < 4.6 Ω @ VGS = 10V, ID =1A.
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2015 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-A46.G 2N60-C.

Datasheet Details

Part number	2N60-C
Manufacturer	UTC
File Size	268.67 KB
Description	N-CHANNEL MOSFET
Datasheet	2N60-C Datasheet
Additional preview pages of the 2N60-C datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 2N60-C 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 4.6 Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A46.

Published: Apr 19, 2020 |