* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL 2.Drain 1 TO-251 1 T.

in switching power supplies and adaptors.
* FEATURES * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast switching capabilit.

The UTC 2N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at.

2N60-C

2N60-CBS

2N60-E

2N60-TC

2N60

2N6008

2N6009

2N6027

2N6028

2N6029

2N6030

2N6031

2N6032