2N60-F Key Features
- RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 2N60-F
- Description: N-CHANNEL MOSFET
- Manufacturer: Unisonic Technologies
- Size: 391.37 KB
Other 2N60-F Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
2N60-E | N-CHANNEL POWER MOSFET |
| ROUM ROUM |
2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET |
HAOHAI |
2N60 | N-Channel MOSFET |
Inchange Semiconductor |
2N60 | TO-251 N-Channel MOSFET |
Nell Power Semiconductor |
2N60 | N-Channel Power MOSFET |