• Part: 2SD879
  • Description: NPN EPITAXIAL SILICON TRANSISTOR
  • Manufacturer: Unisonic Technologies
  • Size: 91.76 KB
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Datasheet Summary

UNISONIC TECHNOLOGIES CO., LTD NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS - DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. - Features - In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. - The charge time is approximately 1 second faster than that of germanium transistors. - Less power dissipation because of lWO Collector-to-Emitter Voltage VCE(SAT), permitting more flashes of light to be emitted. - Large current capacity and highly resistant to break-down. - Excellent linearity of hFE in the region from low current to high current. - ORDERING INFORMATION Ord...