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2SD870 NPN Transistor

2SD870 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD870 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Low Collector Saturation Voltage- : VCE(sat)= 5.

2SD870 Applications

* Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IE Emitter Current

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Datasheet Details

Part number
2SD870
Manufacturer
INCHANGE
File Size
183.12 KB
Datasheet
2SD870-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD870-like datasheet