2SD870 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD870 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Low Collector Saturation Voltage- : VCE(sat)= 5.

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Datasheet Specifications

Part number: 2SD870
Manufacturer: INCHANGE
File Size: 183.12 KB
Datasheet: 2SD870-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IE Emitter Current

2SD870 Distributors

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2SD870 NPN Transistor INCHANGE

INCHANGE 2SD870-like datasheet