2SD878 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD878 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). High Power Dissipation. High Current Capability. Minimum Lot-to-Lot varia.

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2SD878 Datasheet Preview — Preview of 2SD878 PDF

Datasheet Specifications

Part number: 2SD878
Manufacturer: INCHANGE
File Size: 199.70 KB
Datasheet: 2SD878-INCHANGE.pdf
Description: NPN Transistor

Applications

* High power amplifier applications.
* High power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter

2SD878 Distributors

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2SD878 NPN Transistor INCHANGE

INCHANGE 2SD878-like datasheet