Datasheet4U Logo Datasheet4U.com

2SD878 NPN Transistor

2SD878 Description

isc Silicon NPN Power Transistor 2SD878 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). High Power Dissipation. High Current Capability. Minimum Lot-to-Lot varia.

2SD878 Applications

* High power amplifier applications.
* High power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter

📥 Download Datasheet

Preview of 2SD878 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD878
Manufacturer
INCHANGE
File Size
199.70 KB
Datasheet
2SD878-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD870 - NPN Transistor (Toshiba)
  • 2SD871 - NPN Transistor (Toshiba)
  • 2SD873 - NPN Transistor (Toshiba)
  • 2SD874 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SD874-HF - NPN Transistors (Kexin)
  • 2SD874-Q - NPN Silicon Power Transistors (MCC)
  • 2SD874-R - NPN Silicon Power Transistors (MCC)
  • 2SD874-S - NPN Silicon Power Transistors (MCC)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD878-like datasheet