* RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.0A * High switching speed * High breakdown voltage
* SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO-252.

The UTC 4N100 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and high breakdown voltage.
* FEATURES * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.0A * High switching speed * High breakdown voltage.

4N10

4N100-FC

4N100-FCQ

4N120

4N135-P

4N150

4N150-P

4N03L02

4N041R1

4N04R7

4N04R8

4N0603

4N0607