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4N100 - N-CHANNEL MOSFET

Description

advanced technology to provide the customers with high switching speed and high breakdown voltage.

Features

  • RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.0A.
  • High switching speed.
  • High breakdown voltage.
  • SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO-252 1.Gate 3.Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N100 Power MOSFET 4A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and high breakdown voltage.  FEATURES * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.0A * High switching speed * High breakdown voltage  SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO-252 1.Gate 3.
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