4N100 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 4N100 Power MOSFET 4A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTC’s

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UNISONIC TECHNOLOGIES CO., LTD 4N100-FCQ Preliminary 4A, 1000V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N100-FCQ provide excellent RDS(ON)

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UNISONIC TECHNOLOGIES CO., LTD 4N100-FC 4.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charg

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IXFN44N100P 1000 V, 220 mΩ PolarTM HiperFETTM Power MOSFET MOSFET Datasheet Pinout Diagram (SOT-227B) baseplate D D G G S* S* S S Features:

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDS

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isc N-Channel MOSFET Transistor IXTY1R4N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche vo

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Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Sym

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Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN44N100Q3 VDSS ID25 RDS(on)

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK24N100Q3 IXFX24N100Q3 D G S Symbol VDSS VDG

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1000V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching Advance Technical Information IXYA24N100A4HV IXYP24N100A4 VCES = 1000V IC

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1000V N-Channel MOSFETs PMF04N100T General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS techn

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IXTH 14N100 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID25 RDS(on) = 1000 V = 14 A = 0.82 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg M

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www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d

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www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High d

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HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A t

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Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Lo

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www.DataSheet4U.com HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sh

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Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25

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