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MMIX1F44N100Q3 - Power MOSFET

IXYS

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Datasheet Details

Part number	MMIX1F44N100Q3
Manufacturer	IXYS
File Size	235.35 KB
Description	Power MOSFET
Datasheet	MMIX1F44N100Q3_IXYS.pdf

MMIX1F44N100Q3 Product details

Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG z Isolated Tab D TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C S G G = Gate S = Source D = Drain 1.6mm (0.062 in. ) from Case for 10s Plastic Body.

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Published: Sep 11, 2012 |