* Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG z Isol
MMIX1F44N100Q3 Datasheet (235.35 KB)
MMIX1F44N100Q3
IXYS
235.35 KB
Power mosfet.
Advance Technical Information HiperFETTM Power MOSFET Q3-Class (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Symbol.
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