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MMIX2F150N20T Power MOSFET

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Description

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX2F150N20T N-Channel Enhancement Mode Avalanche R.

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Datasheet Specifications

Part number
MMIX2F150N20T
Manufacturer
IXYS
File Size
274.61 KB
Datasheet
MMIX2F150N20T-IXYS.pdf
Description
Power MOSFET

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~)
* Fast Intrinsic Rectifier
* Avalanche Rated
* Very Low RDS(on) Advantages
* Easy to

Applications

* DC-DC Converters
* Battery Chargers
* Switch-Mode and Resonant-Mode Power Supplies
* DC Choppers
* AC Motor Drives
* Uninterruptible Power Supplies
* High Speed Power Switching Applications © 2014 IXYS CORPORATION, All Rights Reserved DS100621A(9/14) Symbol Test Co

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Power MOSFET IXYS
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