MMIX2F150N20T Datasheet - IXYS

MMIX2F150N20T Power MOSFET

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX2F150N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on)  200V 84A 16.5m G2S G2 D2 D1 S2 S1 G1S G1 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC =.

MMIX2F150N20T Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~)

* Fast Intrinsic Rectifier

* Avalanche Rated

* Very Low RDS(on) Advantages

* Easy to

MMIX2F150N20T Datasheet (274.61 KB)