* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~)
* Fast Intrinsic Rectifier
* Avalanche Rated
* Very Low RDS(on) Advantages
* Easy to
MMIX2F150N20T Datasheet (274.61 KB)
MMIX2F150N20T
IXYS
274.61 KB
Power mosfet.
Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX2F150N20T N-Channel Enhancement Mode Avalanche R.
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