MMIX1Y25N250CV1 High Voltage IGBT

IXYS

Description

High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information MMIX1Y25N250CV1 VCES = IC110 = VCE(sat)  2500V 18A 4.0.

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Datasheet Specifications

Part number: MMIX1Y25N250CV1
Manufacturer: IXYS
File Size: 261.00 KB
Datasheet: MMIX1Y25N250CV1-IXYS.pdf
Description: High Voltage IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Heatsink Surface
* 2500V~ Electrical Isolation
* Anti-Parallel Diode
* High Current Handling Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved DS100819A(3/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs

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MMIX1Y25N250CV1 High Voltage IGBT IXYS

IXYS MMIX1Y25N250CV1-like datasheet