MMIX1Y25N250CV1 Datasheet - IXYS

MMIX1Y25N250CV1, High Voltage IGBT

High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information MMIX1Y25N250CV1 VCES = IC110 = VCE(sat)  2500V 18A 4.0.

datasheet Preview Page 1 from Datasheet4u.com

MMIX1Y25N250CV1-IXYS.pdf

MMIX1Y25N250CV1 Datasheet Preview — Preview of MMIX1Y25N250CV1 PDF

Datasheet Details

Part number:

MMIX1Y25N250CV1

Manufacturer:

IXYS

File Size:

261.00 KB

Description:

High Voltage IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Heatsink Surface
* 2500V~ Electrical Isolation
* Anti-Parallel Diode
* High Current Handling Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved DS100819A(3/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs

MMIX1Y25N250CV1 Distributors

📁 Related Datasheet

MMI-6SF MMI-810E MMI-910B MMI131A MMI200-PC MMI300

📌 All Tags

MMIX1Y25N250CV1 High Voltage IGBT IXYS

IXYS MMIX1Y25N250CV1-like datasheet