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MMIX1Y25N250CV1 - High Voltage IGBT

IXYS

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Datasheet Details

Part number	MMIX1Y25N250CV1
Manufacturer	IXYS
File Size	261.00 KB
Description	High Voltage IGBT
Datasheet	MMIX1Y25N250CV1-IXYS.pdf

MMIX1Y25N250CV1 Product details

Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Heatsink Surface.
2500V~ Electrical Isolation.
Anti-Parallel Diode.
High Current Handling Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 2500 V VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V ICES VCE = VCES, VGE = 0V Note 2, TJ = 100C 25 μA 100 μA IGES VCE = 0V, VGE = ± 20V ±100 nA VCE(sat) IC = 25A, VGE.

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Published: Feb 11, 2025 |