* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Heatsink Surface
* 2500V~ Electrical Isolation
* Anti-Parallel Diode
* High Current Handling Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES
MMIX1Y25N250CV1 Datasheet (261.00 KB)
MMIX1Y25N250CV1
IXYS
261.00 KB
High voltage igbt.
High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information MMIX1Y25N250CV1 VCES = IC110 = VCE(sat) 2500V 18A 4.0.
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