MMIX1X200N60B3H1 Datasheet - IXYS

MMIX1X200N60B3H1 Extreme Light Punch Through IGBT

Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 72A 1.7V 110ns C Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°.

MMIX1X200N60B3H1 Features

* E = Emitter z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Optimized for Low Conduction and Switching Losses z Avalanche Rated z Short Circuit Capability z Very High Current Capability z Square RBSOA Advantages z High Power Density

MMIX1X200N60B3H1 Datasheet (250.08 KB)