Datasheet Specifications
- Part number
- MMIX1X200N60B3H1
- Manufacturer
- IXYS
- File Size
- 250.08 KB
- Datasheet
- MMIX1X200N60B3H1-IXYS.pdf
- Description
- Extreme Light Punch Through IGBT
Description
Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 (Electrically Isolated Tab) Extreme Light Punch Through IGBT fo.
Features
* E = Emitter z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Optimized for Low Conduction and Switching Losses z Avalanche Rated z Short Circuit Capability z Very High Current Capability z Square RBSOA Advantages z High Power DensityApplications
* z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100473A(02/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE =MMIX1X200N60B3H1 Distributors
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