MMIX1X200N60B3H1 Datasheet - IXYS

MMIX1X200N60B3H1, Extreme Light Punch Through IGBT

Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 (Electrically Isolated Tab) Extreme Light Punch Through IGBT fo.

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MMIX1X200N60B3H1-IXYS.pdf

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Datasheet Details

Part number:

MMIX1X200N60B3H1

Manufacturer:

IXYS

File Size:

250.08 KB

Description:

Extreme Light Punch Through IGBT

Features

* E = Emitter z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Optimized for Low Conduction and Switching Losses z Avalanche Rated z Short Circuit Capability z Very High Current Capability z Square RBSOA Advantages z High Power Density

Applications

* z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100473A(02/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE =

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MMIX1X200N60B3H1 Extreme Light Punch Through IGBT IXYS

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