MMIX1G75N250 Datasheet, Igbt, IXYS

✔ MMIX1G75N250 Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxi

✔ MMIX1G75N250 Application

Advance Technical Information MMIX1G75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Electrically Isola

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Part number:

MMIX1G75N250

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IXYS

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📄 Datasheet

Description:

High voltage igbt.

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MMIX1G75N250 High Voltage IGBT IXYS