Datasheet4U Logo Datasheet4U.com

MMIX1G75N250 Datasheet - IXYS

MMIX1G75N250 High Voltage IGBT

High Voltage IGBT For Capacitor Discharge Applications Advance Technical Information MMIX1G75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Electrically Isolated Tab) C Symbol VCES VCES VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 V 2500 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, VGE = 20V, 1ms 110 A 65 A 580 A VGE= 15V, TVJ = 12.

MMIX1G75N250 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Applications Capacitor Discharge Pulser Circuits Advantages High Power Density Easy

MMIX1G75N250 Datasheet (234.12 KB)

Preview of MMIX1G75N250 PDF
MMIX1G75N250 Datasheet Preview Page 2 MMIX1G75N250 Datasheet Preview Page 3

Datasheet Details

Part number:

MMIX1G75N250

Manufacturer:

IXYS

File Size:

234.12 KB

Description:

High voltage igbt.

📁 Related Datasheet

MMIX1F230N20T Power MOSFET (IXYS)

MMIX1F44N100Q3 Power MOSFET (IXYS)

MMIX1X200N60B3H1 Extreme Light Punch Through IGBT (IXYS)

MMIX1Y100N120C3H1 High-Speed IGBT (IXYS)

MMIX1Y25N250CV1 High Voltage IGBT (IXYS)

MMIX2F150N20T Power MOSFET (IXYS)

MMIX4B12N300 Bipolar MOS Transistor (IXYS)

MMIX4B20N300 Bipolar MOS Transistor (IXYS)

TAGS

MMIX1G75N250 High Voltage IGBT IXYS

MMIX1G75N250 Distributor