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MMIX1Y100N120C3H1 High-Speed IGBT

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Description

1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information MMIX1Y100N120C3H1 VCES = IC110 = V ≤.

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Datasheet Specifications

Part number
MMIX1Y100N120C3H1
Manufacturer
IXYS
File Size
281.18 KB
Datasheet
MMIX1Y100N120C3H1-IXYS.pdf
Description
High-Speed IGBT

Features

* E = Emitter z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Square RBSOA z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z

Applications

* z High Frequency Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts DS100480A(03/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on

MMIX1Y100N120C3H1 Distributors

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High-Speed IGBT IXYS
IXYS MMIX1Y100N120C3H1-like datasheet