* E = Emitter z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Square RBSOA z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z
MMIX1Y100N120C3H1 Datasheet (281.18 KB)
MMIX1Y100N120C3H1
IXYS
281.18 KB
High-speed igbt.
1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information MMIX1Y100N120C3H1 VCES = IC110 = V ≤.
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