* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~)
* 175°C Operating Temperature
* Very High Current Handling Capability
* Fast Intrinsic Dio
MMIX1F230N20T Datasheet (232.83 KB)
MMIX1F230N20T
IXYS
232.83 KB
Power mosfet.
Preliminary Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX1F230N20T N-Channel Enhancement Mode A.
📁 Related Datasheet
MMIX1F44N100Q3 Power MOSFET (IXYS)
MMIX1G75N250 High Voltage IGBT (IXYS)
MMIX1X200N60B3H1 Extreme Light Punch Through IGBT (IXYS)
MMIX1Y100N120C3H1 High-Speed IGBT (IXYS)
MMIX1Y25N250CV1 High Voltage IGBT (IXYS)
MMIX2F150N20T Power MOSFET (IXYS)
MMIX4B12N300 Bipolar MOS Transistor (IXYS)
MMIX4B20N300 Bipolar MOS Transistor (IXYS)
MMIX4B22N300 Monolithic Bipolar MOS Transistor (IXYS)
MMIX4G20N250 High Voltage IGBT (IXYS)
