MMIX1F230N20T Datasheet - IXYS

MMIX1F230N20T Power MOSFET

Preliminary Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX1F230N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on)  trr  200V 156A 8.3m 200ns D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = .

MMIX1F230N20T Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~)

* 175°C Operating Temperature

* Very High Current Handling Capability

* Fast Intrinsic Dio

MMIX1F230N20T Datasheet (232.83 KB)