MMIX1F230N20T Power MOSFET

IXYS

Description

Preliminary Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX1F230N20T N-Channel Enhancement Mode A.

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Datasheet Specifications

Part number: MMIX1F230N20T
Manufacturer: IXYS
File Size: 232.83 KB
Datasheet: MMIX1F230N20T-IXYS.pdf
Description: Power MOSFET

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~)
* 175°C Operating Temperature
* Very High Current Handling Capability
* Fast Intrinsic Dio

Applications

* DC-DC Converters and Off-Line UPS
* Primary-Side Switch
* High Speed Power Switching Applications © 2014 IXYS CORPORATION, All Rights Reserved DS100433A(04/14) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 10V, ID =

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MMIX1F230N20T Power MOSFET IXYS

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