* z G D S ISOLATED TAB G = Gate S = Source D = Drain 1.6 mm (0.063 in.) from Case for 10s Plastic body for 10s Mounting Force 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 260 40..120 / 9..27 2500 3000 8 Silicon Chip on Direct-Copper Bond (DCB) Substrate - High Power Dissipation - Isolated Mount
IXFL34N100 Datasheet (127.92 KB)
IXFL34N100
IXYS Corporation
127.92 KB
Hiperfet power mosfet isoplus264.
HiPerFETTM Power MOSFET ISOPLUS264TM
(Electrically Isolated Tab) Single-Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low.
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