IXFL39N90 Datasheet - IXYS Corporation

IXFL39N90, HiPerFET Power MOSFETs ISOPLUS264

HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rat.

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IXFL39N90_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFL39N90

Manufacturer:

IXYS Corporation

File Size:

548.06 KB

Description:

HiPerFET Power MOSFETs ISOPLUS264

Features

* z RDS(on) t = 900 V = 34 A = 220 mΩ < ns ISOPLUS-264TM G D S (Backside) G = Gate S = Source D = Drain Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

Applications

* z z z www. DataSheet4U. net DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 100 2 220 V V nA µA

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IXFL39N90 HiPerFET Power MOSFETs ISOPLUS264 IXYS Corporation

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