* z RDS(on) t = 900 V = 34 A = 220 mΩ < ns ISOPLUS-264TM G D S (Backside) G = Gate S = Source D = Drain Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFL39N90 Datasheet (548.06 KB)
IXFL39N90
IXYS Corporation
548.06 KB
Hiperfet power mosfets isoplus264.
HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM
(Electrically Isolated Backside) Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rat.
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