IXFL39N90 Datasheet - IXYS Corporation

IXFL39N90 HiPerFET Power MOSFETs ISOPLUS264

HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ .

IXFL39N90 Features

* z RDS(on) t = 900 V = 34 A = 220 mΩ < ns ISOPLUS-264TM G D S (Backside) G = Gate S = Source D = Drain Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFL39N90 Datasheet (548.06 KB)

IXFL39N90 Datasheet Preview — Preview of IXFL39N90 PDF

Datasheet Details

Part number:

IXFL39N90

Manufacturer:

IXYS Corporation

File Size:

548.06 KB

Description:

Hiperfet power mosfets isoplus264.

📁 Related Datasheet

IXFL30N120P Polar HiPerFET Power MOSFET (IXYS Corporation)

IXFL32N120P Polar HiPerFET Power MOSFET (IXYS Corporation)

IXFL34N100 HiPerFET Power MOSFET ISOPLUS264 (IXYS Corporation)

IXFL36N110P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFL38N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFL38N100Q2 Power MOSFET (IXYS)

IXFL100N50P PolarHV HiPerFET Power MOSFET (IXYS Corporation)

IXFL44N100P Power MOSFET (Littelfuse)

IXFL44N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFL44N60 HiPerFET Power MOSFETs Single Die MOSFET (IXYS Corporation)

TAGS

IXFL39N90 HiPerFET Power MOSFETs ISOPLUS264 IXYS Corporation

Image Gallery

IXFL39N90 Distributor