IXFL39N90 Datasheet, ISOPLUS264, IXYS Corporation

IXFL39N90 Features

• Isoplus264 z RDS(on) t = 900 V = 34 A = 220 mΩ < ns ISOPLUS-264TM G D S (Backside) G = Gate S = Source D = Drain Silicon chip on Direct-Copper-Bond substrate - High power dissipation - I

PDF File Details

Part number:

IXFL39N90

Manufacturer:

IXYS Corporation

File Size:

548.06kb

Download:

📄 Datasheet

Description:

Hiperfet power mosfets isoplus264.

IXFL39N90 Application

• Applications z z z www.DataSheet4U.net DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor contr

TAGS

IXFL39N90

IXYS Corporation

📁 Related Datasheet

IXFL30N120P - Polar HiPerFET Power MOSFET (IXYS Corporation)
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.

IXFL32N120P - Polar HiPerFET Power MOSFET (IXYS Corporation)
Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrin.

IXFL34N100 - HiPerFET Power MOSFET ISOPLUS264 (IXYS Corporation)
HiPerFETTM Power MOSFET ISOPLUS264TM (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low.

IXFL36N110P - Polar Power MOSFET HiPerFET (IXYS Corporation)
Advance Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS V.

IXFL38N100P - Polar Power MOSFET HiPerFET (IXYS Corporation)
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrin.

IXFL38N100Q2 - Power MOSFET (IXYS)
HiPerFETTM Power MOSFET Q2-Class IXFL38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS .

IXFL100N50P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 100N50P VDSS ID25 = 500 V = 70 A RDS(on) ≤ 52 mΩ ≤ 200 ns tr.

IXFL44N100P - Power MOSFET (Littelfuse)
IXFL44N100P 1000 V, 240 mΩ PolarTM HiPerFETTM Power MOSFET MOSFET Datasheet Pinout Diagram (ISOPLUS i5-PakTM (HV)) Tab D G S GD S G: Gate; D: D.

IXFL44N100P - Polar Power MOSFET HiPerFET (IXYS Corporation)
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

IXFL44N60 - HiPerFET Power MOSFETs Single Die MOSFET (IXYS Corporation)
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS.