Datasheet4U Logo Datasheet4U.com

IXFL39N90 Datasheet - IXYS Corporation

IXFL39N90 - HiPerFET Power MOSFETs ISOPLUS264

HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤

IXFL39N90 Features

* z RDS(on) t = 900 V = 34 A = 220 mΩ < ns ISOPLUS-264TM G D S (Backside) G = Gate S = Source D = Drain Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFL39N90_IXYSCorporation.pdf

Preview of IXFL39N90 PDF
IXFL39N90 Datasheet Preview Page 2

Datasheet Details

Part number:

IXFL39N90

Manufacturer:

IXYS Corporation

File Size:

548.06 KB

Description:

Hiperfet power mosfets isoplus264.

📁 Related Datasheet

IXFL30N120P IXFL32N120P IXFL34N100 IXFL36N110P IXFL38N100P IXFL38N100Q2

📌 All Tags

IXFL39N90 HiPerFET Power MOSFETs ISOPLUS264 IXYS Corporation