IXFL36N110P Datasheet - IXYS Corporation

IXFL36N110P, Polar Power MOSFET HiPerFET

Advance Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS V.

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IXFL36N110P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFL36N110P

Manufacturer:

IXYS Corporation

File Size:

104.53 KB

Description:

Polar Power MOSFET HiPerFET

Features

* z z z UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z Symbol

Applications

* V nA μA z z z z 4 mA 260 mΩ High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, All r

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IXFL36N110P Polar Power MOSFET HiPerFET IXYS Corporation

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