Datasheet Specifications
- Part number
- IXFL36N110P
- Manufacturer
- IXYS Corporation
- File Size
- 104.53 KB
- Datasheet
- IXFL36N110P_IXYSCorporation.pdf
- Description
- Polar Power MOSFET HiPerFET
Description
Advance Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS V.
Features
* z z z UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z SymbolApplications
* V nA μA z z z z 4 mA 260 mΩ High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, All rIXFL36N110P Distributors
📁 Related Datasheet
📌 All Tags