Datasheet4U Logo Datasheet4U.com

IXFL36N110P

Polar Power MOSFET HiPerFET

IXFL36N110P Features

* z z z UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z Symbol

IXFL36N110P Datasheet (104.53 KB)

Preview of IXFL36N110P PDF

Datasheet Details

Part number:

IXFL36N110P

Manufacturer:

IXYS Corporation

File Size:

104.53 KB

Description:

Polar power mosfet hiperfet.
Advance Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS V.

📁 Related Datasheet

IXFL30N120P Polar HiPerFET Power MOSFET (IXYS Corporation)

IXFL32N120P Polar HiPerFET Power MOSFET (IXYS Corporation)

IXFL34N100 HiPerFET Power MOSFET ISOPLUS264 (IXYS Corporation)

IXFL38N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFL38N100Q2 Power MOSFET (IXYS)

IXFL39N90 HiPerFET Power MOSFETs ISOPLUS264 (IXYS Corporation)

IXFL100N50P PolarHV HiPerFET Power MOSFET (IXYS Corporation)

IXFL44N100P Power MOSFET (Littelfuse)

IXFL44N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFL44N60 HiPerFET Power MOSFETs Single Die MOSFET (IXYS Corporation)

TAGS

IXFL36N110P Polar Power MOSFET HiPerFET IXYS Corporation

Image Gallery

IXFL36N110P Datasheet Preview Page 2

IXFL36N110P Distributor