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IXFL36N110P - Polar Power MOSFET HiPerFET

IXYS Corporation

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Datasheet Details

Part number	IXFL36N110P
Manufacturer	IXYS Corporation
File Size	104.53 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFL36N110P_IXYSCorporation.pdf

IXFL36N110P Product details

Features

z z z UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 18A, Note 1 TJ.

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Published: May 13, 2011 |