IXFL38N100P Datasheet - IXYS Corporation

IXFL38N100P, Polar Power MOSFET HiPerFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrin.

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IXFL38N100P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFL38N100P

Manufacturer:

IXYS Corporation

File Size:

147.19 KB

Description:

Polar Power MOSFET HiPerFET

Features

* z Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 300 260 2500 3000 40..120/4.5..27 8 Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z Internationa

Applications

* z 50 μA 4 mA 230 mΩ Switched-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Controls © 2009 IXYS CORPORATION, All Rights Reserved DS99755B(7/09) IXFL38N100P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs

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IXFL38N100P Polar Power MOSFET HiPerFET IXYS Corporation

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