Datasheet4U.com

IXFL38N100P - Polar Power MOSFET HiPerFET

IXYS Corporation

📥 Download Datasheet

IXFL38N100P Datasheet Preview — Preview of IXFL38N100P PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXFL38N100P
Manufacturer	IXYS Corporation
File Size	147.19 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFL38N100P_IXYSCorporation.pdf

IXFL38N100P Product details

Features

z Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 300 260 2500 3000 40..120/4.5..27 8 Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z International Standard Packages z miniBLOC, with Aluminium Nitride Isolation z Low Drain to Tab Capacitance(.

📁 IXFL38N100P Similar Datasheet

IXFL38N100Q2 - Power MOSFET (IXYS)
IXFL44N100P - Power MOSFET (Littelfuse)
IXF18102 - 10Gbps Physical Layer Device (Intel Corporation)
IXF18104 - 10 Gigabit Lan PHY (Intel Corporation)
IXFA102N15T - N-Channel MOSFET (INCHANGE)
IXFA110N15T2 - N-Channel MOSFET (INCHANGE)
IXFA12N65X2 - Power MOSFET (IXYS)
IXFA130N10T - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS Corporation

IXFL30N120P - Polar HiPerFET Power MOSFET
IXFL32N120P - Polar HiPerFET Power MOSFET
IXFL34N100 - HiPerFET Power MOSFET ISOPLUS264
IXFL36N110P - Polar Power MOSFET HiPerFET
IXFL39N90 - HiPerFET Power MOSFETs ISOPLUS264
IXFL100N50P - PolarHV HiPerFET Power MOSFET

Published: May 13, 2011 |