Datasheet Specifications
- Part number
- IXFL30N120P
- Manufacturer
- IXYS Corporation
- File Size
- 129.15 KB
- Datasheet
- IXFL30N120P_IXYSCorporation.pdf
- Description
- Polar HiPerFET Power MOSFET
Description
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.
Features
* z z V~ N/lb. g z FC Weight UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode AdvApplications
* z z z 50 μA 5 mA 380 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, AllIXFL30N120P Distributors
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