Datasheet4U.com

IXFL30N120P - Polar HiPerFET Power MOSFET

IXYS Corporation

📥 Download Datasheet

IXFL30N120P Datasheet Preview — Preview of IXFL30N120P PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXFL30N120P
Manufacturer	IXYS Corporation
File Size	129.15 KB
Description	Polar HiPerFET Power MOSFET
Datasheet	IXFL30N120P_IXYSCorporation.pdf

IXFL30N120P Product details

Features

z z V~ N/lb. g z FC Weight UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V,.

📁 IXFL30N120P Similar Datasheet

IXFL38N100Q2 - Power MOSFET (IXYS)
IXFL44N100P - Power MOSFET (Littelfuse)
IXF18102 - 10Gbps Physical Layer Device (Intel Corporation)
IXF18104 - 10 Gigabit Lan PHY (Intel Corporation)
IXFA102N15T - N-Channel MOSFET (INCHANGE)
IXFA110N15T2 - N-Channel MOSFET (INCHANGE)
IXFA12N65X2 - Power MOSFET (IXYS)
IXFA130N10T - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS Corporation

IXFL32N120P - Polar HiPerFET Power MOSFET
IXFL34N100 - HiPerFET Power MOSFET ISOPLUS264
IXFL36N110P - Polar Power MOSFET HiPerFET
IXFL38N100P - Polar Power MOSFET HiPerFET
IXFL39N90 - HiPerFET Power MOSFETs ISOPLUS264
IXFL100N50P - PolarHV HiPerFET Power MOSFET

Published: May 13, 2011 |