PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL30N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 18A 380mΩ 300ns ISOPLUS i5-PakTM (HV) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings
IXFL30N120P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFL30N120P
Manufacturer:
IXYS Corporation
File Size:
129.15 KB
Description:
Polar hiperfet power mosfet.