Datasheet4U Logo Datasheet4U.com

IXFL30N120P

Polar HiPerFET Power MOSFET

IXFL30N120P Features

* z z V~ N/lb. g z FC Weight UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Adv

IXFL30N120P Datasheet (129.15 KB)

Preview of IXFL30N120P PDF

Datasheet Details

Part number:

IXFL30N120P

Manufacturer:

IXYS Corporation

File Size:

129.15 KB

Description:

Polar hiperfet power mosfet.
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.

📁 Related Datasheet

IXFL32N120P Polar HiPerFET Power MOSFET (IXYS Corporation)

IXFL34N100 HiPerFET Power MOSFET ISOPLUS264 (IXYS Corporation)

IXFL36N110P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFL38N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFL38N100Q2 Power MOSFET (IXYS)

IXFL39N90 HiPerFET Power MOSFETs ISOPLUS264 (IXYS Corporation)

IXFL100N50P PolarHV HiPerFET Power MOSFET (IXYS Corporation)

IXFL44N100P Power MOSFET (Littelfuse)

IXFL44N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFL44N60 HiPerFET Power MOSFETs Single Die MOSFET (IXYS Corporation)

TAGS

IXFL30N120P Polar HiPerFET Power MOSFET IXYS Corporation

Image Gallery

IXFL30N120P Datasheet Preview Page 2 IXFL30N120P Datasheet Preview Page 3

IXFL30N120P Distributor