IXFL30N120P Datasheet - IXYS Corporation

IXFL30N120P, Polar HiPerFET Power MOSFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.

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IXFL30N120P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFL30N120P

Manufacturer:

IXYS Corporation

File Size:

129.15 KB

Description:

Polar HiPerFET Power MOSFET

Features

* z z V~ N/lb. g z FC Weight UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Adv

Applications

* z z z 50 μA 5 mA 380 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, All

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IXFL30N120P Polar HiPerFET Power MOSFET IXYS Corporation

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