* l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intr
IXFL100N50P Datasheet (225.45 KB)
IXFL100N50P
IXYS Corporation
225.45 KB
Polarhv hiperfet power mosfet.
PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM
(Electrically Isolated Back Surface)
IXFL 100N50P
VDSS ID25
= 500 V = 70 A RDS(on) ≤ 52 mΩ ≤ 200 ns tr.
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