* z D = Drain Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 3
IXFL32N120P Datasheet (148.95 KB)
IXFL32N120P
IXYS Corporation
148.95 KB
Polar hiperfet power mosfet.
Preliminary Technical Information
PolarTM HiPerFETTM Power MOSFET
( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrin.
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