IXFL32N120P Datasheet - IXYS Corporation

IXFL32N120P, Polar HiPerFET Power MOSFET

Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrin.

datasheet Preview Page 1 from Datasheet4u.com

IXFL32N120P_IXYSCorporation.pdf

IXFL32N120P Datasheet Preview — Preview of IXFL32N120P PDF

Datasheet Details

Part number:

IXFL32N120P

Manufacturer:

IXYS Corporation

File Size:

148.95 KB

Description:

Polar HiPerFET Power MOSFET

Features

* z D = Drain Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 3

Applications

* z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS , VGS = 0V Note 2, TJ = 125°C VGS = 10V, ID = 16A, Note 1 Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ± 300 V V nA Switch-

IXFL32N120P Distributors

📁 Related Datasheet

IXFL38N100Q2 IXFL44N100P IXF18102 IXF18104 IXFA102N15T IXFA110N15T2

📌 All Tags

IXFL32N120P Polar HiPerFET Power MOSFET IXYS Corporation

IXYS Corporation IXFL32N120P-like datasheet