IXFL32N120P Datasheet - IXYS Corporation

IXFL32N120P Polar HiPerFET Power MOSFET

Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL32N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 24A 340mΩ 300ns ISOPLUS i5-PakTM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C.

IXFL32N120P Features

* z D = Drain Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 3

IXFL32N120P_IXYSCorporation.pdf