IXFL32N120P Datasheet, Mosfet, IXYS Corporation

IXFL32N120P Features

• Mosfet z D = Drain Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Maxim

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Part number:

IXFL32N120P

Manufacturer:

IXYS Corporation

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148.95kb

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📄 Datasheet

Description:

Polar hiperfet power mosfet.

IXFL32N120P Application

• Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1m

TAGS

IXFL32N120P

IXYS Corporation

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