IXFL32N120P Polar HiPerFET Power MOSFET

IXYS Corporation

Description

Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrin.

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Datasheet Specifications

Part number: IXFL32N120P
Manufacturer: IXYS Corporation
File Size: 148.95 KB
Datasheet: IXFL32N120P_IXYSCorporation.pdf
Description: Polar HiPerFET Power MOSFET

Features

* z D = Drain Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 3

Applications

* z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS , VGS = 0V Note 2, TJ = 125°C VGS = 10V, ID = 16A, Note 1 Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ± 300 V V nA Switch-

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IXFL32N120P Polar HiPerFET Power MOSFET IXYS Corporation

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