IXFL38N100Q2 Datasheet - IXYS

IXFL38N100Q2 Power MOSFET

HiPerFETTM Power MOSFET Q2-Class IXFL38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL T SOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s Mounting force .

IXFL38N100Q2 Features

* Electrically isolated mounting tab Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Applications DC-DC converters Switched-mode and resonant-mode power supplies DC choppers Pulse generati

IXFL38N100Q2_IXYS.pdf