IXFK24N100F Datasheet, Mosfets, IXYS

IXFK24N100F Features

• Mosfets l l D = Drain TAB = Drain l 0.4/6 Nm/lb.in. 6 10 g g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inducta

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Part number:

IXFK24N100F

Manufacturer:

IXYS

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120.24kb

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📄 Datasheet

Description:

Hiperrf power mosfets.

IXFK24N100F Application

• Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V ±200 nA TJ = 25°C

TAGS

IXFK24N100F

IXYS

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