IXFK220N17T2 Datasheet - IXYS Corporation

IXFK220N17T2, GigaMOS TrenchT2 HiperFET Power MOSFET

Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK220N17T.

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Datasheet Details

Part number:

IXFK220N17T2

Manufacturer:

IXYS Corporation

File Size:

195.01 KB

Description:

GigaMOS TrenchT2 HiperFET Power MOSFET

Features

* z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z z Symbol Test Conditions (TJ =

Applications

* z z z z 25 μA 3 mA 5.1 6.3 mΩ z z z z Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications www. DataSheet4U. net © 2010 IXYS CORPORATION, All Right

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IXFK220N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET IXYS Corporation

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