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IXFK20N80Q

Power MOSFET

IXFK20N80Q Features

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±200 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA mA mA W

* IXYS advanced low Qg process

* International standard packages

* Epoxy meet UL 94 V-0, flammability classificat

IXFK20N80Q Datasheet (72.52 KB)

Preview of IXFK20N80Q PDF

Datasheet Details

Part number:

IXFK20N80Q

Manufacturer:

IXYS Corporation

File Size:

72.52 KB

Description:

Power mosfet.
Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS V.

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IXFK20N80Q Power MOSFET IXYS Corporation

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