Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK210N17T IXFX210N17T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 210A 7.5mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°
Datasheet Details
Part number:
IXFK210N17T
Manufacturer:
IXYS
File Size:
147.36 KB
Description:
Gigamos power mosfet.