IXFK210N17T Datasheet - IXYS

IXFK210N17T, GigaMOS Power MOSFET

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK210N17.

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IXFK210N17T_IXYS.pdf

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Datasheet Details

Part number:

IXFK210N17T

Manufacturer:

IXYS

File Size:

147.36 KB

Description:

GigaMOS Power MOSFET

Features

* z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z

Applications

* z z z z 50 μA 3 mA 7.5 mΩ z z z z Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications © 2009 IXYS CORPORATION, All Rights Reserved DS100138(03

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IXFK210N17T GigaMOS Power MOSFET IXYS

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