IXFK21N100F Datasheet - IXYS Corporation

IXFK21N100F Power MOSFET

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr IXFK21N100F IXFX21N100F VDSS = ID25 = RDS(on) ≤ 1000V 21A 500mΩ trr ≤ 250ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤.

IXFK21N100F Features

* z RF Capable MOSFETs z Double Metal Process for Low Gate Resistive z Avalanche Rated z Fast Intrinsic Rectifier Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Converters z Switch-Mode and Resonant-Mode Power Supplies, >500kHz Switching z DC Choppers z 13.5 MHz I

IXFK21N100F_IXYSCorporation.pdf