PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 20 A 50 A 10 A 1 J IS IDM, VDD VDSS, TJ 150C TC = 25C 15 78
IXFK20N120P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFK20N120P
Manufacturer:
IXYS Corporation
File Size:
2.01 MB
Description:
Power mosfet.