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IXFK20N120P Datasheet - IXYS Corporation

IXFK20N120P - Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 20 A 50 A 10 A 1 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 15 78

IXFK20N120P Features

* Fast Intrinsic Diode

* Dynamic dv/dt Rating

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* D

IXFK20N120P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFK20N120P

Manufacturer:

IXYS Corporation

File Size:

2.01 MB

Description:

Power mosfet.

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IXFK20N120P Power MOSFET IXYS Corporation