IXFK21N100Q, IXFX21N100Q Datasheet - IXYS

IXFK21N100Q HiPerFET Power MOSFET

www.DataSheet4U.com HiPerFET TM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD .

IXFK21N100Q Features

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* International standard packages

* Low RDS (on)

* Rated for unclamped Inductive load switching (UIS) rated

* Molding epoxies meet UL 94 V-0 flammabi

IXFX21N100Q_IXYS.pdf

IXFK21N100Q Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFK21N100Q, IXFX21N100Q. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFK21N100Q, IXFX21N100Q

Manufacturer:

IXYS

File Size:

623.20 KB

Description:

Hiperfet power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFK21N100Q, IXFX21N100Q.
Please refer to the document for exact specifications by model.

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TAGS

IXFK21N100Q IXFX21N100Q HiPerFET Power MOSFET IXYS

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