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IXFK200N10P, IXFX200N10P Datasheet - IXYS

IXFK200N10P Polar HiPerFET Power MOSFET

Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N10P IXFK 200N10P IXFX 200N10P VDSS ID25 RDS(on) = 100 V = 200 A = 7.5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Dr.

IXFK200N10P Features

* z z C = Collector Tab = Collector z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount

IXFX200N10P_IXYS.pdf

This datasheet PDF includes multiple part numbers: IXFK200N10P, IXFX200N10P. Please refer to the document for exact specifications by model.
IXFK200N10P Datasheet Preview Page 2 IXFK200N10P Datasheet Preview Page 3

Datasheet Details

Part number:

IXFK200N10P, IXFX200N10P

Manufacturer:

IXYS

File Size:

132.03 KB

Description:

Polar hiperfet power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFK200N10P, IXFX200N10P.
Please refer to the document for exact specifications by model.

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TAGS

IXFK200N10P IXFX200N10P Polar HiPerFET Power MOSFET IXYS

IXFK200N10P Distributor